| 1. | Does the collector current rise in equal steps for equal increments of base current ?
基极电流作等值增长时，集电极电流是否也相应地等值上升呢？ |
| 2. | In other words , collector current mimics , or mirrors , diode current
换句话说，集电极电流模仿或镜像了二极管电流。 |
| 3. | We ' ve seen already how maintaining a constant base current through an active transistor results in the regulation of collector current , according to the ratio
我们已经看到有源晶体管的恒定的基极电流是如何以系数控制集电极电流的。 |
| 4. | Remember , the transistor ' s collector current is almost equal to its emitter current , as the ratio of a typical transistor is almost unity ( 1 )
不要忘了，通常典型晶体管的系数几乎是1 ，因此晶体管集电极电流与发射极电流也几乎是相等的。 |
| 5. | Therefore , if we have a way of holding emitter current constant through a transistor , the transistor will work to regulate collector current at a constant value
于是，只要我们能让晶体管的发射极电流保持恒定，它就能保持发射极电流为恒定值。 |
| 6. | The lower resistance should select properly , too big to make radio frequency signal drive collector current too little , too small to make amplifier instable easily
下偏电阻要选取适中，过大会使射频信号推动集电极电流的能力过小，过小容易使放大器不稳定。 |
| 7. | Meanwhile , the relatioship between al ' s width of emitter and collector current , which called " extended electrode enhancing current " , has been presented
同时，也给出了大面积铺铝的横向pnp管中发射极电极铝条宽度与集电极电流的关系，称之为“电极扩展增强电流法” 。 |
| 8. | If we have control over the transistor ' s emitter current by setting diode current with a simple resistor adjustment , then we likewise have control over the transistor ' s collector current
我们只要简单的调节电阻，设定二极管电流，就能控制晶体管的发射极电流，于是也就能控制晶体管集电极电流。 |
| 9. | Well , the ratio works similarly : if emitter current is held constant , collector current will remain at a stable , regulated value so long as the transistor has enough collector - to - emitter voltage drop to maintain it in its active mode
系数的作用与之类似：如果发射极电流保持恒定，只要集电极发射极电压足以使其保持在放大区，集电极电流也将稳定保持。 |
| 10. | This subject is a research about manufacturing silicon magnetic - transistor with rectangle - plank cubic construction on silicon surface by mems technology , meanwhile it also makes a experiment - research on characteristic of silicon magnetic - transistor manufactured experiment expresses that silicon magnetic - transistor with rectangle plank cubic construction which is made by mems technology owns many virtues , which are as follows : first , stronger v - i characteristic curves and higher magnetic sensitivity ( collector current magnetic sensitivity of sample can achieve to 227 % / t ) , second , lower negative - temperature coefficient that is small
本课题主要研究采用mems技术在硅片上制作矩形板状立体结构硅磁敏三极管，并对制作的硅磁敏三极管样品基本特性进行实验研究。实验结果表明本课题采用mems技术设计、制作的矩形板状立体结构的硅磁敏三极管样品具有较理想的伏安特性曲线、具有较高的磁灵敏度(样品集电极电流磁灵敏度可达227 / t ) 、具有负温度系数且温度系数较小、在磁场一定时i _ c i _ b线性关系较好等优点。 |
